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Effects of Gate-Recess Structure on High-Frequency Characteristics of 0.1 μm Metamorphic HEMTs
Oh, Jung-Hun, Baek, Yong-Hyun, Lim, Byeong-Ok, Moon, Sung-Woon, Lee, Sang-Jin, Rhee, Jin-Koo, Hwang, In-Seok, Kim, Sam-DongVolume:
154
Year:
2007
Language:
english
Journal:
Journal of The Electrochemical Society
DOI:
10.1149/1.2732184
File:
PDF, 807 KB
english, 2007