High Electron Mobility Metal–Insulator–Semiconductor...

Applied Physics Express 2009 / 11 Vol. 2; Iss. 12

High Electron Mobility Metal–Insulator–Semiconductor Field-Effect Transistors Fabricated on (111)-Oriented InGaAs Channels

Ishii, Hiroyuki, Miyata, Noriyuki, Urabe, Yuji, Itatani, Taro, Yasuda, Tetsuji, Yamada, Hisashi, Fukuhara, Noboru, Hata, Masahiko, Deura, Momoko, Sugiyama, Masakazu, Takenaka, Mitsuru, Takagi, Shinich
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Volume:
2
Language:
english
Journal:
Applied Physics Express
DOI:
10.1143/APEX.2.121101
Date:
November, 2009
File:
PDF, 1.48 MB
english, 2009
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