510–515 nm InGaN-Based Green Laser Diodes on...

Applied Physics Express 2009 / 5 Vol. 2

510–515 nm InGaN-Based Green Laser Diodes on c -Plane GaN Substrate

Miyoshi, Takashi, Masui, Shingo, Okada, Takeshi, Yanamoto, Tomoya, Kozaki, Tokuya, Nagahama, Shin-ichi, Mukai, Takashi
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Volume:
2
Language:
english
Journal:
Applied Physics Express
DOI:
10.1143/APEX.2.062201
Date:
May, 2009
File:
PDF, 359 KB
english, 2009
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