Drivability Enhancement for AlGaN/GaN High-Electron...

Applied Physics Express 2009 / 3 Vol. 2

Drivability Enhancement for AlGaN/GaN High-Electron Mobility Transistors with AlN Spacer Layer Using Si Ion Implantation Doping

Nanjo, Takuma, Suita, Muneyoshi, Oishi, Toshiyuki, Abe, Yuji, Yagyu, Eiji, Yoshiara, Kiichi, Tokuda, Yasunori
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Volume:
2
Language:
english
Journal:
Applied Physics Express
DOI:
10.1143/APEX.2.031003
Date:
March, 2009
File:
PDF, 113 KB
english, 2009
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