Characterization of 6H-SiC JFET Integrated Circuits over a...

Materials Science Forum 2010 / 4 Vol. 645-648

Characterization of 6H-SiC JFET Integrated Circuits over a Broad Temperature Range from -150 °C to +500 °C

Neudeck, Philip G., Krasowski, Michael J., Chen, Liang Yu, Prokop, Norman F.
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Volume:
645-648
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.645-648.1135
Date:
April, 2010
File:
PDF, 400 KB
english, 2010
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