High Concentration Doping of 6H-SiC by Ion Implantation:...

Materials Science Forum 2000 Vol. 338-342

High Concentration Doping of 6H-SiC by Ion Implantation: Flash versus Furnace Annealing

Panknin, D., Wirth, H., Anwand, W., Brauer, Gerhard, Skorupa, Wolfgang
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Volume:
338-342
Year:
2000
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.338-342.877
File:
PDF, 340 KB
english, 2000
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