Improvement in the Crystalline Quality of Epitaxial GaN...

Electrochemical and Solid-State Letters 2004 Vol. 7; Iss. 4

Improvement in the Crystalline Quality of Epitaxial GaN Films Grown by MOCVD by Adopting Porous 4H-SiC Substrate

Jeong, Jae Kyeong, Kim, Hyun Jin, Seo, Hui-Chan, Kim, Hee Jin, Yoon, Euijoon, Hwang, Cheol Seong, Kim, Hyeong Joon
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Volume:
7
Year:
2004
Language:
english
Journal:
Electrochemical and Solid-State Letters
DOI:
10.1149/1.1647996
File:
PDF, 74 KB
english, 2004
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