Planar p-n Diodes Fabricated by MeV-Energy and...

Materials Science Forum 2001 Vol. 353-356

Planar p-n Diodes Fabricated by MeV-Energy and High-Temperature Selective Implantation of Aluminum to 4H-SiC

Sugimoto, Hiroshi, Kinouchi, Shin Ichi, Tarui, Yoichiro, Imaizumi, Masayuki, Ohtsuka, Ken Ichi, Takami, Tetsuya, Ozeki, Tatsuo
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Volume:
353-356
Year:
2001
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.353-356.731
File:
PDF, 433 KB
2001
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