Interface States in 4H- and 6H-SiC MOS Capacitors: A Comparative Study between Conductance Spectroscopy and Thermal Dielectric Relaxation Current Technique
Løvlie, L.S., Pintilie, Ioana, Kumar C.P., S., Grossner, Ulrike, Svensson, Bengt G., Beljakowa, Svetlana, Reshanov, Sergey A., Krieger, Michael, Pensl, GerhardVolume:
615-617
Year:
2009
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.615-617.497
File:
PDF, 358 KB
english, 2009