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Study of Substrate Induced Deep Level Defects in Bulk GaN Layers Grown by Molecular Beam Epitaxy Using Deep Level Transient Spectroscopy
Ajaz Un Nabi, M., Arshad, M. Imran, Ali, Adnan, Asghar, M., Hasan, M. AVolume:
295-297
Language:
english
Journal:
Advanced Materials Research
DOI:
10.4028/www.scientific.net/AMR.295-297.777
Date:
July, 2011
File:
PDF, 323 KB
english, 2011