4H-SiC Wafers Studied by X-Ray Absorption and Raman...

Materials Science Forum 2012 / 5 Vol. 717-720

4H-SiC Wafers Studied by X-Ray Absorption and Raman Scattering

Xu, Qiang, Sun, Hua Yang, Chen, Cheng, Jang, Ling Yun, Rusli, E., Mendis, Suwan P., Tin, Chin Che, Qiu, Zhi Ren, Wu, Zheng Yun, Liu, Chee Wee, Feng, Zhe Chuan
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Volume:
717-720
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.717-720.509
Date:
May, 2012
File:
PDF, 388 KB
english, 2012
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