Trapping Effects Dependence on Electron Confinement in...

Applied Physics Express 2012 / 3 Vol. 5; Iss. 3

Trapping Effects Dependence on Electron Confinement in Ultrashort GaN-on-Si High-Electron-Mobility Transistors

Medjdoub, Farid, Ducatteau, Damien, Zegaoui, Malek, Grimbert, Bertrand, Rolland, Nathalie, Rolland, Paul-Alain
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Volume:
5
Language:
english
Journal:
Applied Physics Express
DOI:
10.1143/apex.5.034103
Date:
March, 2012
File:
PDF, 683 KB
english, 2012
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