Dependence of the Ionization Energy of Phosphorous Donor in...

Materials Science Forum 2006 Vol. 527-529

Dependence of the Ionization Energy of Phosphorous Donor in 4H-SiC on Doping Concentration

Rao, Sunil, Chow, T.P., Bhat, I.
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Volume:
527-529
Year:
2006
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.527-529.597
File:
PDF, 557 KB
english, 2006
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