Lateral Control of Indium Content and Wavelength of III–Nitride Diode Lasers by Means of GaN Substrate Patterning
Sarzyński, Marcin, Suski, Tadeusz, Staszczak, Grzegorz, Khachapuridze, Aleksander, Domagała, Jarosław Z., Czernecki, Robert, Plesiewicz, Jerzy, Pawłowska, Joanna, Najda, Stephen P., Boćkowski, Michał,Volume:
5
Language:
english
Journal:
Applied Physics Express
DOI:
10.1143/apex.5.021001
Date:
January, 2012
File:
PDF, 766 KB
english, 2012