Analysis Model for Efficiency Droop of InGaN Light-Emitting Diodes Based on Reduced Effective Volume of Active Region by Carrier Localization
Li, Hongjian, Li, Panpan, Kang, Junjie, Li, Zhi, Zhang, Yiyun, Liang, Meng, Li, Zhicong, Li, Jing, Yi, Xiaoyan, Wang, GuohongVolume:
6
Language:
english
Journal:
Applied Physics Express
DOI:
10.7567/apex.6.092101
Date:
September, 2013
File:
PDF, 4.36 MB
english, 2013