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Demonstration of 1.0 µm InGaAs High-Power and Broad Spectral Bandwidth Superluminescent Diodes by Using Dual Quantum Well Structure
Ohgoh, Tsuyoshi, Mukai, Atsushi, Yaguchi, Junya, Asano, HidekiVolume:
6
Language:
english
Journal:
Applied Physics Express
DOI:
10.7567/apex.6.014101
Date:
January, 2013
File:
PDF, 672 KB
english, 2013