Electron mobility improvement by in situ annealing before...

Applied Physics Express 2014 / 06 Vol. 7; Iss. 6

Electron mobility improvement by in situ annealing before deposition of HfO 2 gate dielectric with equivalent oxide thickness of sub-1.0 nm in In 0.53 Ga 0.47 As n-type metal–insulator–semiconductor field-effect transistor

Oda, Minoru, Irisawa, Toshifumi, Jevasuwan, Wipakorn, Maeda, Tatsuro, Kamimuta, Yuuichi, Ichikawa, Osamu, Ishihara, Toshio, Osada, Takenori, Tezuka, Tsutomu
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Volume:
7
Language:
english
Journal:
Applied Physics Express
DOI:
10.7567/APEX.7.061202
Date:
June, 2014
File:
PDF, 1.83 MB
english, 2014
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