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[ECS 210th ECS Meeting - Cancun, Mexico (October 29-November 3, 2006)] ECS Transactions - Selective Epitaxial Growth Of Si And Relaxed Ge By UHV-CVD In Si(001) Windows
Fossard, Frédéric, Halbwax, Mathieu, Yam, Vy, Nguyen, Huu Lam, Mathet, Véronique, Cammilleri, Davide, Débarre, Dominique, Boulmer, Jacques, Bouchier, DanielVolume:
3
Year:
2006
Language:
english
DOI:
10.1149/1.2355856
File:
PDF, 268 KB
english, 2006