A Study of Deep Energy-Level Traps at the 4H-SiC/SiO2...

Materials Science Forum 2009 Vol. 600-603

A Study of Deep Energy-Level Traps at the 4H-SiC/SiO2 Interface and Their Passivation by Hydrogen

Allerstam, Fredrik, Sveinbjörnsson, Einar Ö.
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Volume:
600-603
Year:
2009
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.600-603.755
File:
PDF, 313 KB
english, 2009
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