Optical properties of C-doped bulk GaN wafers grown by...

Journal of Applied Physics 2014 / 12 Vol. 116; Iss. 22

Optical properties of C-doped bulk GaN wafers grown by halide vapor phase epitaxy

Khromov, S., Hemmingsson, C., Monemar, B., Hultman, L., Pozina, G.
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Volume:
116
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4903819
Date:
December, 2014
File:
PDF, 2.25 MB
english, 2014
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