LPE of Silicon Carbide Using Diluted Si-Ge Flux

Materials Science Forum 2005 Vol. 483-485

LPE of Silicon Carbide Using Diluted Si-Ge Flux

Filip, Octavian, Epelbaum, Boris M., Bickermann, Matthias, Winnacker, Albrecht
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Volume:
483-485
Year:
2005
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.483-485.133
File:
PDF, 1.01 MB
english, 2005
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