Field Effect Mobility in n-Channel Si Face 4H-SiC MOSFET...

Materials Science Forum 2005 Vol. 483-485

Field Effect Mobility in n-Channel Si Face 4H-SiC MOSFET with Gate Oxide Grown on Aluminium Ion-Implanted Material

Gudjónsson, G., Ólafsson, H.Ö., Allerstam, Fredrik, Nilsson, Per Åke, Sveinbjörnsson, Einar Ö., Rödle, T., Jos, R.
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Volume:
483-485
Year:
2005
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.483-485.833
File:
PDF, 201 KB
english, 2005
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