Formation of (CoxNi1−x)Si2 ternary silicide by thermal...

Vacuum 2015 / 07 Vol. 117

Formation of (CoxNi1−x)Si2 ternary silicide by thermal annealing of evaporated Co/Ni thin films on Si substrate

Sedrati, Charafeddine, Bouabellou, Abderrahmane, Derafa, Achour, Boudissa, Mokhtar, Benazzouz, Chawki, Hammoudi, Abdelhakim
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Volume:
117
Language:
english
Journal:
Vacuum
DOI:
10.1016/j.vacuum.2015.03.031
Date:
July, 2015
File:
PDF, 1.11 MB
english, 2015
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