The Influence of Device Structure on High-electric-field...

MRS Proceedings 2006 / 1 Vol. 955

The Influence of Device Structure on High-electric-field Effects and Reliability of AlGaN/GaN HFETs

Kuang, Weiwei, Trew, Robert J, Bilbro, Griff L, Liu, Yueying
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Volume:
955
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/PROC-0955-I14-01
Date:
January, 2006
File:
PDF, 365 KB
english, 2006
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