![](/img/cover-not-exists.png)
A Model for Threshold Voltage Shift under Positive and Negative High-Field Electron Injection in Complementary Metal-Oxide-Semiconductor (CMOS) Transistors
Broż, Tomasz, Chan, Y. David, Viswanathan, Chand R.Volume:
34
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.34.969
Date:
February, 1995
File:
PDF, 731 KB
1995