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High Purity SiC Epitaxial Growth by Chemical Vapor Deposition Using CH3SiH3 and C3H8 Sources
Hatayama, Tomoaki, Yano, Hiroshi, Uraoka, Yukiharu, Fuyuki, TakashiVolume:
527-529
Year:
2006
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.527-529.203
File:
PDF, 314 KB
english, 2006