Formation of Deep Traps at the 4H-SiC/SiO2 Interface when...

Materials Science Forum 2007 Vol. 556-557

Formation of Deep Traps at the 4H-SiC/SiO2 Interface when Utilizing Sodium Enhanced Oxidation

Allerstam, Fredrik, Gudjónsson, G., Sveinbjörnsson, Einar Ö., Rödle, T., Jos, R.
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Volume:
556-557
Year:
2007
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.556-557.517
File:
PDF, 328 KB
english, 2007
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