Transport Properties of Insulated Gate AlInN/InN...

Advanced Materials Research 2011 / 11 Vol. 403-408

Transport Properties of Insulated Gate AlInN/InN Heterojunction Field Effect Transistor

Islam, Md. Sherajul, Hossain, Md. Arafat, Muhtadi, Sakib Mohammed, Bhuiyan, Ashraful G.
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Volume:
403-408
Language:
english
Journal:
Advanced Materials Research
DOI:
10.4028/www.scientific.net/amr.403-408.64
Date:
November, 2011
File:
PDF, 285 KB
english, 2011
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