Crystallinity Studies of GaN/Si Films Grown by MOCVD at...

Crystallinity Studies of GaN/Si Films Grown by MOCVD at Various Substrate Temperatures Using XRD

Ng, Sha Shiong, Hassan, Z., Abu Hassan, H., Kordesch, M.E.
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Volume:
517
Year:
2006
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.517.69
File:
PDF, 304 KB
english, 2006
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