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Effect of Post-Oxidation Annealing in Wet O2 and N2O Ambient on Thermally Grown SiO2/4H-SiC Interface for P-Channel MOS Devices
Katakami, Shuji, Arai, Manabu, Takenaka, Kensuke, Yonezawa, Yoshiyuki, Ishimori, Hitoshi, Okamoto, Mitsuo, Kojima, Kazutoshi, Fukuda, KenjiVolume:
717-720
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.717-720.709
Date:
May, 2012
File:
PDF, 1.01 MB
english, 2012