930, 170Ω.cm2 Lateral Two-Zone RESURF MOSFETs in 4H-SiC...

Materials Science Forum 2004 Vol. 457-460

930, 170Ω.cm2 Lateral Two-Zone RESURF MOSFETs in 4H-SiC with NO Annealing

Wang, W., Banerjee, S., Chow, T.P., Gutmann, Ronald J.
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Volume:
457-460
Year:
2004
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.457-460.1413
File:
PDF, 353 KB
english, 2004
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