Origin of the Current Transport Anisotropy in Epitaxial...

Materials Science Forum 2014 / 10 Vol. 806

Origin of the Current Transport Anisotropy in Epitaxial Graphene Grown on Vicinal 4H-SiC (0001) Surfaces

Giannazzo, Filippo, Deretzis, Ioannis, La Magna, Antonino, Nicotra, Giuseppe, Spinella, Corrado, Fisichella, Gabriele, Fiorenza, Patrick, Yakimova, Rositza, Roccaforte, Fabrizio
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Volume:
806
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.806.103
Date:
October, 2014
File:
PDF, 544 KB
english, 2014
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