Inductively coupled plasma etching of GaN and its effect on...

Inductively coupled plasma etching of GaN and its effect on electrical characteristics

Rong, B., van der Drift, E., Reeves, R. J., Sloof, W. G., Cheung, R.
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Volume:
19
Year:
2001
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.1421543
File:
PDF, 502 KB
english, 2001
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