Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures
2001 Vol. 19; Iss. 6
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Inductively coupled plasma etching of GaN and its effect on electrical characteristics
Rong, B., van der Drift, E., Reeves, R. J., Sloof, W. G., Cheung, R.Volume:
19
Year:
2001
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.1421543
File:
PDF, 502 KB
english, 2001