A New Physical Method Based on $CV$ – $GV$...

IEEE Transactions on Electron Devices 2015 / 3 Vol. 62; Iss. 3

A New Physical Method Based on $CV$ – $GV$ Simulations for the Characterization of the Interfacial and Bulk Defect Density in High- $k$ /III-V MOSFETs

Sereni, Gabriele, Vandelli, Luca, Veksler, Dmitry, Larcher, Luca
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Volume:
62
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2014.2385959
Date:
March, 2015
File:
PDF, 1.55 MB
english, 2015
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