Forward-Bias Degradation in 4H-SiC p+nn+ Diodes: Influence...

Materials Science Forum 2005 Vol. 483-485

Forward-Bias Degradation in 4H-SiC p+nn+ Diodes: Influence of the Mesa Etching

Camara, Nicolas, Thuaire, Aurelie, Bano, Edwige, Zekentes, K.
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Volume:
483-485
Year:
2005
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.483-485.773
File:
PDF, 1.02 MB
english, 2005
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