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Strain-compensated Ge/Si1−xCx quantum dots with Si mediating layers grown by molecular beam epitaxy
Gotoh, Kazuhiro, Oshima, Ryuji, Sugaya, Takeyoshi, Sakata, Isao, Matsubara, Koji, Kondo, MichioVolume:
425
Language:
english
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2015.02.043
Date:
September, 2015
File:
PDF, 2.12 MB
english, 2015