Source-drain Engineering for Channel-limited PMOS Device...

MRS Proceedings 2008 / 1 Vol. 1070

Source-drain Engineering for Channel-limited PMOS Device Performance: Advances in Understanding of Amorphization-Based Implant Techniques

Cowern, Nick E.
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Volume:
1070
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/PROC-1070-E04-01
Date:
January, 2008
File:
PDF, 3.71 MB
english, 2008
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