4H-SiC Surface Morphology Etched Using ClF3 Gas

Materials Science Forum 2010 / 4 Vol. 645-648

4H-SiC Surface Morphology Etched Using ClF3 Gas

Habuka, Hitoshi, Tanaka, Keiko, Katsumi, Yusuke, Takechi, Naoto, Fukae, Katsuya, Kato, Tomohisa
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Volume:
645-648
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.645-648.787
Date:
April, 2010
File:
PDF, 3.47 MB
english, 2010
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