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Steady-State and Transient Forward Current-Voltage Characteristics of 5.5 kV 4H-Silicon Carbide Diodes at High and Superhigh Current Densities
Dyakonova, N.V., Ivanov, Pavel A., Kozlov, V.A., Levinshtein, Michael E., Palmour, John W., Rumyantsev, Sergey L., Singh, RanbirVolume:
338-342
Year:
2000
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.338-342.1319
File:
PDF, 322 KB
2000