Thermal Histories of Defect Centers as Measured by Low...

Materials Science Forum 2010 / 4 Vol. 645-648

Thermal Histories of Defect Centers as Measured by Low Temperature Photoluminescence in n- and p-Type 4H SiC Epilayers Generated by Irradiation with 170 keV or 1 MeV Electrons

Yan, Fei, Devaty, Robert P., Choyke, Wolfgang J., Danno, Katsunori, Alfieri, Giovanni, Kimoto, Tsunenobu, Onoda, Shinobu, Ohshima, Takeshi, Reshanov, Sergey A., Beljakowa, Svetlana, Zippelius, Bernd,
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Volume:
645-648
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.645-648.419
Date:
April, 2010
File:
PDF, 774 KB
english, 2010
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