Electrical and Optical Characterisation of Defects Induced in Epitaxially Grown n-Si During 1 keV Noble Gas Ion Bombardment
Deenapanray, Prakash N.K., Auret, F.D., Myburg, G., Meyer, W.E., Goodman, S.A.Volume:
258-263
Year:
1997
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.258-263.565
File:
PDF, 515 KB
1997