Characterization of the impurity profile at the SiO2/Si...

Spectrochimica Acta Part B: Atomic Spectroscopy 2007 Vol. 62; Iss. 5

Characterization of the impurity profile at the SiO2/Si interface using a combination of total reflection X-ray fluorescence spectrometry and successive etching of silicon

C. Steen, A. Nutsch, P. Pichler, H. Ryssel
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Volume:
62
Year:
2007
Language:
english
Pages:
4
DOI:
10.1016/j.sab.2007.04.010
File:
PDF, 200 KB
english, 2007
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