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6H-SiC Schottky Diode Edge Terminated Using Amorphous SiC by Sputtering Method
Matsumoto, K., Chen, Y., Kuzmik, J., Nishino, ShigehiroVolume:
264-268
Year:
1998
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.264-268.925
File:
PDF, 272 KB
1998