Low Temperature Deposition of HfO2 Gate Insulator on SiC by...

Materials Science Forum 2006 Vol. 527-529

Low Temperature Deposition of HfO2 Gate Insulator on SiC by Metalorganic Chemical Vapor Deposition

Hino, Shiro, Hatayama, Tomohiro, Miura, Naruhisa, Ozeki, Tatsuo, Tokumitsu, Eisuke
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Volume:
527-529
Year:
2006
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.527-529.1079
File:
PDF, 206 KB
english, 2006
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