MOS Capacitors Fabricated on 3C-SiC(111) Layers Grown on 6H-SiC(0001)
Lorenzzi, Jean, Esteve, Romain, Jegenyes, Nikoletta, Reshanov, Sergey A., Schöner, Adolf, Ferro, GabrielVolume:
158
Year:
2011
Language:
english
Journal:
Journal of The Electrochemical Society
DOI:
10.1149/1.3565169
File:
PDF, 947 KB
english, 2011