Characterization of SiC MOS Structures using Conductance...

Materials Science Forum 2000 Vol. 338-342

Characterization of SiC MOS Structures using Conductance Spectroscopy and Capacitance Voltage Analysis

Sveinbjörnsson, Einar Ö., Ahnoff, M., Ólafsson, H.Ö.
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Volume:
338-342
Year:
2000
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.338-342.1117
File:
PDF, 371 KB
2000
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