On the Formation of Intrinsic Defects in 4H-SiC by High...

Materials Science Forum 2012 / 5 Vol. 717-720

On the Formation of Intrinsic Defects in 4H-SiC by High Temperature Annealing Steps

Zippelius, Bernd, Suda, Jun, Kimoto, Tsunenobu
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Volume:
717-720
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.717-720.247
Date:
May, 2012
File:
PDF, 315 KB
english, 2012
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