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[ECS 214th ECS Meeting - Honolulu, HI (October 12 - October 17, 2008)] ECS Transactions - Reliability of Ti-based Gate Dielectrics on strained-Si0.91Ge0.09 and Ge under Dynamic and AC Stressing
Mahata, C., Bera, Milan K., Bose, P.K., Maiti, C.K.Volume:
16
Year:
2008
Language:
english
DOI:
10.1149/1.2986774
File:
PDF, 236 KB
english, 2008