Reduction of Density of 4H-SiC / SiO2 Interface Traps by...

Materials Science Forum 2014 / 2 Vol. 778-780

Reduction of Density of 4H-SiC / SiO2 Interface Traps by Pre-Oxidation Phosphorus Implantation

Sledziewski, Tomasz, Mikhaylov, Aleksey, Reshanov, Sergey, Schöner, Adolf, Weber, Heiko B., Krieger, Michael
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Volume:
778-780
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.778-780.575
Date:
February, 2014
File:
PDF, 882 KB
english, 2014
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