Improvement in the SiO2/4H-SiC Interfacial Region by...

Materials Science Forum 2012 / 5 Vol. 717-720

Improvement in the SiO2/4H-SiC Interfacial Region by Thermal Treatments with Hydrogen Peroxide

Pitthan, Eduardo, Corrêa, Silma A., Palmieri, Rodrigo, Soares, Gabriel Vieira, Boudinov, Henri I., Stedile, Fernanda Chiarello
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Volume:
717-720
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.717-720.753
Date:
May, 2012
File:
PDF, 329 KB
english, 2012
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